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INTERNATIONAL JOURNAL OF GLOBAL RESEARCH INNOVATIONS & TECHNOLOGY (IJGRIT) [ Vol. 4 | No. 2(II) | April - June, 2026 ]

Spectroscopic Study of Al Doped Zinc Oxide (AZNO) Thin Films for Optoelectronic Devices

Dr. Shital Prasad & Vandana Agrawal

Recently, large band gap semiconductor (ZnO) is among the largest studied material because of a wide range of applications in photodetectors, light emitting diode, blue and ultraviolet laser diodes, transparent conductive oxides (TCOs), transparent field effect transistors, gas sensors, solar cell and dilute magnetic semiconductors (DMSs). This paper reports 1 at% Al doped ZnO (AZNO) thin films prepared by sol-gel spin coating method at 1000rpm to 6000rpm spin coating speeds. The sol was prepared from zinc acetate dehydrate, 2-methoxyethanol and mono-ethanolamine as precursor, solvent and stabilizer respectively. Aluminium chloride hexahydrate was used for doping of Al. The effect of spin coating speed on absorbance, transmission, Raman shift and fluorescence spectra of Aldoped ZnO thin films is studied in this paper. The absorbance of thin films decreases corresponding to increase in spinning speed. The transmittance of all thin films in the range 400nm to 700nm is greater than 90%. Raman and fluorescence spectra of thin films show that the intensity of both spectra decreases with increase in the spin coating speed.

Prasad, S. & Agrawal, V. (2026). Spectroscopic Study of Al Doped Zinc Oxide (AZNO) Thin Films for Optoelectronic Devices. International Journal of Global Research Innovations & Technology, 04(02(II)), 10–18. https://doi.org/10.62823/IJGRIT/4.2(II).9084
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DOI:

Article DOI: 10.62823/IJGRIT/4.2(II).9084

DOI URL: https://doi.org/10.62823/IJGRIT/4.2(II).9084

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