A 1-Dimensional analytical solution for Poisson’s equation is derived by using the surface potential based charge model for a symmetric double gate junctionless MOSFET by considering only the mobile charge carriers. On the basis of surface potential based charge model a relation between the surface potential and gate voltage is obtained in terms of Lambert-W function. Then the Pao-Sah integral is evaluated to obtain the drain current in the subthreshold region. The result of the obtained drain current model is being compared with the drain current of a symmetric double gate (DG) MOSFET in the subthreshold region. The model is then compared with the results of the Cogenda’s Visual TCAD simulation tool and the model is being found to be in good agreement with the simulation results.

Keywords: Junctionless, Double Gate, Simulation, Doping, Surface Potential, Drain Current.