A two dimensional model for the potential distribution in the silicon film is derived for the symmetrical double gate MOSFET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the sub threshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFET is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of SILVACO (Atlas) tool for different channel lengths and silicon film thicknesses. Lastly the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of symmetrical double gate MOSFET is in good agreement with the simulated results for channel length to silicon film thickness ratio greater than or equal to 2.

Keywords: DG-MOSFET, Short Channel Effect (SCE), Threshold Voltage, SILVACO.